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L6122 L6123
100 V DMOS SWITCHES
.OUTPUTVOLTAGETO100V .0, .SUPPLYVOLTAGEUPTO60V .LOWI .TTL/ .HI
5 RDS (on) DESCRIPTION
ADVANCE DAT A
MULTIPOWER BCD TECHNOLOGY
NPUT CURRENT CMOS COMPATIBLE INPUTS GH SWITCHING FREQUENCY (200kHz)
Realized with the Multipower-BCD mixed bipolar/CMOS/DMOS process, the L6122/23 monolithic three DMOS switch is designed for high current, high voltage switching applications. Each of the three switches is controlled by a logic input and all three are controlled by a common enable input. All inputs are TTL/CMOS compatible for direct connection to logic circuits. Each source is available for the insertion of the sense resistors in current control applications. Two versions are available : the L6122 mounted in a Powerdip 14 + 3 + 3 package and the L6123 in a 15-lead Multiwatt package. PIN CONNECTIONS (top view)
Pow erd ip 14+3+3 (Plastic Package) ORDERING NUMBER : L6122
MULTIWATT15V (Plastic Package) ORDERING NUMBER : L6123
L6122 (PO WERDIP)
L6123 (MULTIWATT15V)
April 1993
This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VCC ID IDM (*) ISD ISDM VIN VEN VS Ptot Drain-source Voltage Supply Voltage Continuous Drain Current @ Tpins = 90 C, POWERDIP @ Tcase = 90 C, MULTIWATT Pulsed Drain Current Continuous Source-drain Diode Current POWERDIP MULTIWATT @ Tpins = 90 C, POWERDIP @ Tcase = 90 C, MULTIWATT POWERDIP MULTIWATT Parameter Value 100 60 1.5 3 5 8 1.5 3 5 8 7 7 - 1 to + 4 @ @ @ @ Tpins = 90 C, POWERDIP Tcase = 90 C, MULTIWATT Tamb = 70 C, POWERDIP Tamb = 70 C, MULTIWATT 4.3 20 1.3 2.3 - 40 to + 150 Unit V V A A A A A A A A V V V W W W W C
Pulsed Source Drain Diode Current Input Voltage Enable Voltage Source Voltage Total Power Dissipation
Tstg, Tj
Storage and Junction Temperature Range
(*) Pulse width 300 s, duty cycle 10 %. NOTE : ID, IDM, ISD, ISDM are given per channel.
THERMAL DATA
Symbol R th j-pins R th j-case Rth j-amb Parameter Thermal Resistance Junction-pins Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Max. POWERDIP14+3+3 14 65 MULTIW ATT15 3 35 Unit
o o o
C/W C/W C/W
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ELECTRICAL CHARACTERISTICS (Tj = 25oC, VCC = 40V, unless otherwise specified)
Symbol VCC ICC IQ BVDSS IDSS Parameter Supply Voltage Supply Current Quiescent Current Drain Source Breakdown Voltage Output Leakage Current All VIN = H VEN = Square Wave (200kHz, 50% DC) VEN = L ID = 1mA VEN = L VEN = L VDS = 100V VDS = 80V, Tj = 125C VCC 14V, ID = 1.5A - VEN, VIN = H - 0.3 2 VIN, VEN = L VIN, VEN = H 300 ID = 1.5A See Test Circuit and Waveforms 100 400 100 ISD = 1.5A, VEN = L ISD = 1.5A - VIN , VEN = H 1.5 1.2 100 Test Conditions Min. 14 9 2 3 Typ. Max. 48 Unit V mA mA V mA 1 1 0.7 0.8 7 - 100 10 V V A A ns ns ns ns V V
R DS(on) (*) VINL, VENL VINH, VENH IINL, IENL IINH, IENH td (on) tr td (off ) tf VSD (*) VSD(on) (*)
Static Drain-source on Resistance Input Low Voltage Input High Voltage Input Low Current Input High Current Turn on Delay Time Rise Time Turn off Delay Time Fall Time Source Drain Diode Forward Voltage Source Drain Forward Voltage
(*) Pulse test : pulse width = 300 s, duty cycle = 2 %.
SWITCHING TIMES RESISTIVE LOAD Figure 1 : Test Circuit.
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Figure 2 : Waveforms.
a)
b)
Figure 3 : Static Drain-source on Resistance.
Figure 4 : Normalized Breakdown Voltage vs. Temperature.
Figure 5 : Normalized on Resistance vs. Temperature.
Figure 6 : Typical Source-drain Diode Forward Voltage.
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Figure 7 : Rth j-amb vs. Dissipated Power (Multiwatt).
(*) Rth 9C/W
Figure 8 : Transient Thermal Resistance for Single Pulses (Multiwatt).
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Figure 9 : Peak Transient Thermal Resistance vs. Pulse Width and Duty Cycle (Multiwatt).
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MULTIWATT15 PACKAGE MECHANICAL DATA
DIM. A B C D E F G G1 H1 H2 L L1 L2 L3 L4 L7 M M1 S S1 Dia1 22.1 22 17.65 17.25 10.3 2.65 4.2 4.5 1.9 1.9 3.65 4.3 5.08 17.5 10.7 0.49 0.66 1.14 17.57 19.6 20.2 22.6 22.5 18.1 17.75 10.9 2.9 4.6 5.3 2.6 2.6 3.85 0.870 0.866 0.695 0.679 0.406 0.104 0.165 0.177 0.075 0.075 0.144 0.169 0.200 0.689 0.421 1.27 17.78 1 0.55 0.75 1.4 17.91 0.019 0.026 0.045 0.692 0.772 0.795 0.890 0.886 0.713 0.699 0.429 0.114 0.181 0.209 0.102 0.102 0.152 0.050 0.700 mm MIN. TYP. MAX. 5 2.65 1.6 0.039 0.022 0.030 0.055 0.705 MIN. inch TYP. MAX. 0.197 0.104 0.063
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POWERDIP20 PACKAGE MECHANICAL DATA
DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.30 1.27 8.80 2.54 22.86 7.10 5.10 0.130 0.050 0.38 0.51 0.85 0.50 0.50 24.80 0.346 0.100 0.900 0.280 0.201 0.015 1.40 mm TYP. MAX. MIN. 0.020 0.033 0.020 0.020 0.976 0.055 inch TYP. MAX.
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved MULTIWATT(R) is a Registered Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
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